SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench. Subsequently, an epitaxial channel layer is formed in the first gate trench.

主权项

1. A manufacturing method of a semiconductor device having metal gate comprising:
providing a substrate having at least a first semiconductor device formed thereon, the first semiconductor device comprising a first dummy gate; removing the first dummy gate to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench; and forming an epitaxial channel layer in the first gate trench.