SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device having a structure capable of reducing the self-inductance of internal wiring. The semiconductor device includes: a lower board having a lower conductor layer formed on the surface thereof; a switching element bonded to the lower conductor layer in an element bonding area; a terminal bonded to the lower conductor layer in a terminal bonding area; an upper board stacked on the lower board in a board bonding area between the element bonding area and the terminal bonding area, and having an upper conductor layer on the surface thereof; and a switching element connecting member which connects the switching element with the upper conductor layer.

主权项

1. A power module comprising:
a first board assembly; and a second board assembly, wherein the first board assembly includes: a first lower board having a first lower conductor layer formed on a surface thereof; a plurality of first semiconductor devices bonded to the first lower conductor layer in a first element bonding area; a first power supply terminal bonded to the first lower conductor layer in a first terminal bonding area; and a first upper board stacked on the first lower board in a first board bonding area, and having a first upper conductor layer on a surface thereof; the second board assembly includes: a second lower board having a second lower conductor layer formed on a surface thereof; a plurality of second semiconductor devices bonded to the second lower conductor layer in a second element bonding area; an output terminal electrically connected to the first upper conductor layer, and bonded to the second lower conductor layer in a second terminal bonding area; a second upper board stacked on the second lower board in a second board bonding area, and having a second upper conductor layer on a surface thereof; and a second power supply terminal bonded to the second upper conductor layer.