| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, in which defects caused by a protrusion part on a surface of an electrode pad are difficult to occur. <P>SOLUTION: A semiconductor device manufacturing method comprises: a first insulation film formation process of forming a first insulation film 4 that covers at least a part of an electrode pad 2 on a substrate 1 equipped with the electrode pad 2 having a protrusion part such as a probing mark 21 on a protrusion part on a surface; a removal process of performing processing capable of removing a part 22 protruded from a surface of the first insulation film 4; and a second insulation film formation process of forming a second insulation film 5 on the first insulation film 4 and the electrode pad 2 after the removal process. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
