| 发明名称 |
Apparatus and Method for Multiple Gate Transistors |
| 摘要 |
A method comprises etching away an upper portion of a substrate to form a trench between two adjacent isolation regions, wherein the substrate has a first crystal orientation and is formed of a first semiconductor material, growing a first semiconductor region in the trench over the substrate, wherein the first semiconductor region is formed of a second semiconductor material and an upper portion of the first semiconductor region has a second crystal orientation and growing a second semiconductor region over the first semiconductor region, wherein the second semiconductor region is formed of a third semiconductor material. |
| 申请公布号 |
US2015372116(A1) |
申请公布日期 |
2015.12.24 |
| 申请号 |
US201514841480 |
申请日期 |
2015.08.31 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Vellianitis Georgios |
| 分类号 |
H01L29/66;H01L29/04;H01L29/165;H01L21/306;H01L29/78;H01L29/06;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
etching away an upper portion of a substrate to form a trench between two adjacent isolation regions, wherein the substrate has a first crystal orientation and is formed of a first semiconductor material; growing a first semiconductor region in the trench over the substrate, wherein the first semiconductor region is formed of a second semiconductor material and an upper portion of the first semiconductor region has a second crystal orientation; and growing a second semiconductor region over the first semiconductor region, wherein the second semiconductor region is formed of a third semiconductor material. |
| 地址 |
Hsin-Chu TW |
