Semiconductor Switching Device with Different Local Threshold Voltage

摘要

A semiconductor device includes a semiconductor substrate having a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. A source metallization is in ohmic contact with the source regions of the switchable cells. A a gate metallization is in ohmic contact with the gate electrode structures of the switchable cells. The active area defined by the switchable cells includes at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold. An area assumed by the first switchable region is larger than an area assumed by the second switchable region.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate comprising a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim, each of the switchable cells comprising a body region, a gate electrode structure and a source region; a source metallization in ohmic contact with the source regions of the switchable cells; and a gate metallization in ohmic contact with the gate electrode structures of the switchable cells; wherein the active area defined by the switchable cells comprises at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold, and wherein an area assumed by the first switchable region is larger than an area assumed by the second switchable region.