发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder.
申请公布号 US2015371825(A1) 申请公布日期 2015.12.24
申请号 US201514627022 申请日期 2015.02.20
申请人 Hitachi High-Technologies Corporation 发明人 Kobayashi Hiroyuki;Nawata Makoto;Koyama Hikaru;Ikenaga Kazuyuki
分类号 H01J37/32;C23C16/44;C23C16/455;C23C16/50 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing apparatus comprising: a processing chamber; a gas supply unit that supplies a process gas to the processing chamber; an exhaust unit that reduces a pressure of the processing chamber; a high frequency power supply that supplies high frequency power that generates plasma inside the processing chamber; a stage electrode that is arranged in the processing chamber to mount a member to be processed on; a high frequency bias power supply that applies a high frequency bias to accelerate ions incident on the member to be processed to the stage electrode; a top plate that is installed in an upper portion of the processing chamber; a shower plate that is installed below the top plate to supply the process gas into the processing chamber; and an inner cylinder that is arranged below the shower plate to prevent a sidewall of the processing chamber from coming into direct contact with the plasma, wherein the high frequency power to generate the plasma is introduced into the processing chamber via the top plate and the shower plate, and a grounded spacer whose base material is a metal is installed between the shower plate and the inner cylinder.
地址 Tokyo JP