发明名称 CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM, AND CLEANING COMPLETION DETERMINING METHOD
摘要 According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.
申请公布号 US2015368794(A1) 申请公布日期 2015.12.24
申请号 US201414765774 申请日期 2014.01.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MORITA Osamu;MORI Shinichiro;KAMEDA Kenji
分类号 C23C16/44;C23C16/22;C23C16/52 主分类号 C23C16/44
代理机构 代理人
主权项 1. (canceled)
地址 Tokyo JP