发明名称 |
CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM, AND CLEANING COMPLETION DETERMINING METHOD |
摘要 |
According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period. |
申请公布号 |
US2015368794(A1) |
申请公布日期 |
2015.12.24 |
申请号 |
US201414765774 |
申请日期 |
2014.01.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MORITA Osamu;MORI Shinichiro;KAMEDA Kenji |
分类号 |
C23C16/44;C23C16/22;C23C16/52 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Tokyo JP |