CONTACT SILICIDE FORMATION USING A SPIKE ANNEALING PROCESS

摘要

A substrate is provided. The substrate has a source/drain region formed therein and a dielectric layer formed thereover. A contact hole is etched in the dielectric layer to expose a portion of the source/drain region. A metal material is formed on the source/drain region exposed by the opening. A first annealing process is performed to facilitate a reaction between the metal material and the portion of the source/drain region disposed therebelow, thereby forming a metal silicide in the substrate. The first annealing process is a spike annealing process. A remaining portion of the metal material is removed after the performing of the first annealing process. Thereafter, a second annealing process is performed. Thereafter, a contact is formed in the contact hole, the contact being formed on the metal silicide.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate having a source/drain region formed therein and a dielectric layer formed thereover; forming an opening in the dielectric layer, wherein the opening exposes the source/drain region; depositing a metal on the substrate in the opening; and performing an annealing process that causes the metal to react with a portion of the substrate disposed therebelow, wherein a reaction of the metal and the portion of the substrate forms a metal silicide in the source/drain region, and wherein the annealing process has a spike profile.