发明名称 LIGHT EMITTING DISPLAY APPARATUS
摘要 There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.
申请公布号 US2015372069(A1) 申请公布日期 2015.12.24
申请号 US201514842649 申请日期 2015.09.01
申请人 CANON KABUSHIKI KAISHA 发明人 Tateishi Yoshinori;Ofuji Masato;Kumomi Hideya;Hayashi Ryo
分类号 H01L27/32;H01L29/786;H01L29/24 主分类号 H01L27/32
代理机构 代理人
主权项 1. A display apparatus comprising: a substrate; a light emitting element, the light emitting element comprising an anode electrode, a cathode electrode and a layer including a light emitting material; a thin film transistor for driving the light emitting element, the thin film transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer which includes an oxide semiconductor, a source electrode, a drain electrode and a first protecting layer provided to cover the semiconductor layer, the source electrode and the drain electrode; a second protecting layer provided between the light emitting element and the thin film transistor; and a film which is sandwiched between the first protecting layer and the second protecting layer and which is provided at a position overlapped the semiconductor layer when viewed from the light emitting element side, wherein the film includes a light shielding region and a light transmissive region, and wherein the source electrode of the thin film transistor is electrically connected to the anode electrode through a contact hole.
地址 Tokyo JP