发明名称 ガスバリアーフィルム及び電子機器
摘要 A gas barrier film (10) that comprises a gas barrier layer (14), which is obtained by irradiating a layer that contains a polysilazane with vacuum ultraviolet light, on a base (11) is formed to contain a compound (A) that satisfies all of the conditions (a), (b) and (c) described below in an amount within the range from 1% by mass to 40% by mass (inclusive) relative to the total mass of the gas barrier layer. (a) The compound (A) has an Si-O bond and an organic group that is directly bonded to Si. (b) The compound (A) has an Si-H group or an Si-OH group. (c) The compound (A) has a molecular weight of from 90 to 1,200 (inclusive).
申请公布号 JP5835344(B2) 申请公布日期 2015.12.24
申请号 JP20130545895 申请日期 2012.11.16
申请人 コニカミノルタ株式会社 发明人 森 孝博
分类号 B32B9/00 主分类号 B32B9/00
代理机构 代理人
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