SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide: a semiconductor device which enables the suppression of the worsening of embedded layer's crystallinity, and the enhancement of the property of a breakdown voltage; and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a mesa provided on the semiconductor substrate and including an active layer; and an Fe-doped InP embedded layer formed on the semiconductor substrate so as to extend from the substrate to at least a side face of the active layer. In the embedded layer, (0-11)-plane growth region of the side face of the active layer is higher than (311)B-plane growth region on the semiconductor substrate in active Fe concentration.