| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable formation of an end face window structure by increasing a bandgap of an active layer at a resonator end face and in a region to be a neighboring region to the resonator end face while inhibiting variation in bandgap of the active layer at the resonator end face and in a region other than the region to be the neighboring region to the resonator end face. <P>SOLUTION: An optical semiconductor device manufacturing method comprises: a step of forming on a semiconductor substrate 1, a semiconductor laminated structure 5 including an active layer 3; a step of forming a hole generation acceleration film 6 on a resonator end face of the semiconductor laminated structure and on a first region 7 to be a neighboring region to the resonator end face; a step of growing a semiconductor layer 9 on a second region 8 of the semiconductor laminated structure other than the first region by using the hole generation acceleration film 6 as a mask; and a step of performing a heat treatment to form a window structure 10 in the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
