SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SGT having a structure that forms a transistor by a work function difference between a metal and a semiconductor.SOLUTION: A semiconductor device comprises: a columnar semiconductor that has an impurity concentration of 10cmor less; a first insulator that surrounds the columnar semiconductor; a first metal that surrounds the first insulator at one end of the columnar semiconductor; a second metal that surrounds the first insulator at the other one end of the columnar semiconductor; a third metal that surrounds the first insulator in a region sandwiched by the first metal and the second metal; a second insulator formed between the first metal and the third metal; a third insulator formed between the second metal and the third metal; a fourth metal that connects the first metal and the one end of the columnar semiconductor; and a fifth metal that connects the second metal and the other one end of the columnar semiconductor. A work function of the third metal is between 4.2 eV and 5.0 eV.