NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a nonvolatile semiconductor memory device, includes: a foundation layer; a stacked body provided on the foundation layer, each of a plurality of first insulating layers and each of a plurality of electrode layers being stacked alternately in the stacked body; a first layer provided between the stacked body and the foundation layer, the first layer including semiconductor, one portion of the first layer on a side of the stacked body including metal; a pair of first semiconductor members extending through the stacked body in a stacking direction of the stacked body; a memory film provided between each of the first semiconductor members and each of the plurality of electrode layers; a second semiconductor member provided inside the first layer and connected to the pair of first semiconductor members; and an insulating film provided between the second semiconductor member and the first layer.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a foundation layer; a stacked body provided on the foundation layer, each of a plurality of first insulating layers and each of a plurality of electrode layers being stacked alternately in the stacked body; a first layer provided between the stacked body and the foundation layer, the first layer including semiconductor, one portion of the first layer on a side of the stacked body including metal; a pair of first semiconductor members extending through the stacked body in a stacking direction of the stacked body; a memory film provided between each of the first semiconductor members and each of the plurality of electrode layers; a second semiconductor member provided inside the first layer and connected to the pair of first semiconductor members; and an insulating film provided between the second semiconductor member and the first layer.