| 摘要 |
A power semiconductor device, operable regardless of thermal stress generation, which reduces heat generation from a wire, and secures the reliability of a bonding portion when the device is used for dealing with a large amount of current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. The power semiconductor device comprises a metal electrode on a power semiconductor die and another metal electrode connected by a metal wire using a wedge bonding connection, wherein the metal wire is Ag or a Ag alloy wire having a diameter greater than 50µm and not greater than 2mm, and the metal electrode has thereon one or more metals and/or alloy layers, each of the layers being 50Å or more in thickness, wherein the metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al. |
