摘要 |
Embodiments of the present disclosure describe a selective diffusion barrier between metals of an integrated circuit (IC) device and associated techniques and configurations. In one embodiment, an apparatus includes a dielectric material, a first interconnect structure comprising a first metal disposed in the dielectric material, a second interconnect structure comprising a second metal disposed in the dielectric material and electrically coupled with the first interconnect structure and a diffusion barrier disposed at an interface between the first interconnect structure and the second interconnect structure, wherein the first metal and the second metal have a different chemical composition, material of the diffusion barrier and the second metal have a different chemical composition and material of the diffusion barrier is not disposed directly between the second metal and the dielectric material. Other embodiments may be described and/or claimed. |
申请人 |
INTEL CORPORATION;ROBERTS, JEANETTE A.;ROMERO, PATRICIO E.;CLENDENNING, SCOTT B.;JEZEWSKI, CHRISTOPHER J.;CHEBIAM , RAMANAN V. |
发明人 |
ROBERTS, JEANETTE A.;ROMERO, PATRICIO E.;CLENDENNING, SCOTT B.;JEZEWSKI, CHRISTOPHER J.;CHEBIAM , RAMANAN V. |