发明名称 PROCESS AND APPARATUS FOR PURIFYING LOW-GRADE SILICON MATERIAL
摘要 <p>A process and apparatus for purifying low-purity silicon material and obtaining a higher-purity silicon material is provided. The process includes providing a melting apparatus equipped with an oxy-fuel burner, and melting the low-purity silicon material in the melting apparatus to obtain a melt of higher-purity silicon material. The melting apparatus may include a rotary drum furnace and the melting of the low-purity silicon material may be carried out at a temperature in the range from 1410° C. to 1700° C. under an oxidizing or reducing atmosphere. A synthetic slag may be added to the molten material during melting. The melt of higher-purity silicon material may be separated from a slag by outpouring into a mould having an open top and insulated bottom and side walls. Once in the mould, the melt of higher-purity silicon material can undergo controlled unidirectional solidification to obtain a solid polycrystalline silicon of an even higher purity.</p>
申请公布号 EP2074060(A4) 申请公布日期 2015.12.23
申请号 EP20070815840 申请日期 2007.09.13
申请人 SILICIO FERROSOLAR, S.L.U. 发明人 LEBLANC, DOMINIC;BOISVERT, RENÉ
分类号 C01B33/037;C01B33/02;C01B33/12;C30B29/06;F27B7/06;F27B7/20 主分类号 C01B33/037
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