发明名称 READ ENHANCEMENT FOR MEMORY
摘要 An electronic circuitry is provided for reading out a memory element (ME). The electronic circuitry comprises a first electronic path (IP) being coupled to the memory element (ME), a second electronic path (RP) having predetermined electrical properties, and a basic detection element (BDE) being coupled to the first and second electronic paths (IP, RP) such that the information contained in the memory element (ME) can be determined by the basic detection element (BDE) based on the relation of a digital signal being propagated over the first path (IP) to a digital signal being propagated over the second path (RP).
申请公布号 EP2089887(B1) 申请公布日期 2015.12.23
申请号 EP20070826901 申请日期 2007.10.29
申请人 NXP B.V. 发明人 MAYOR, CEDRIC
分类号 G11C13/00;G11C7/06;G11C16/28 主分类号 G11C13/00
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