| 摘要 |
A solid-state imaging device 1 includes a light receiving section 2 formed by such exposure as to stitch a plurality of patterns 2A, 2B in a Y-axis direction on a semiconductor substrate. The light receiving section 2 includes a plurality of pixels disposed in a two-dimensional array in the Y-axis direction and an X-axis direction perpendicular to the Y-axis direction. Electric charges are transferred in the X-axis direction in each of pixel columns consisting of a plurality of pixels disposed in the X-axis direction, among the plurality of pixels. |
