ATOMIC LAYER DEPOSITION OF VANADIUM OXIDE FOR MICROBOLOMETER AND IMAGER
摘要
This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.
申请公布号
WO2015195562(A1)
申请公布日期
2015.12.23
申请号
WO2015US35849
申请日期
2015.06.15
申请人
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY;WHEELER, VIRGINIA, D.;KUB, FRANCIS, J.;EDDY, CHARLES, R.;TADJER, MARKO, J.
发明人
WHEELER, VIRGINIA, D.;KUB, FRANCIS, J.;EDDY, CHARLES, R.;TADJER, MARKO, J.
