| 摘要 |
The present invention relates to a light-emitting diode chip and a manufacturing method thereof. According to the present invention, the manufacturing method of a light-emitting diode chip comprises the steps of: forming a transparent electrode layer on an upper semiconductor layer of a light-emitting diode; and performing mesa etching to expose a lower semiconductor layer after formation of the transparent electrode layer, wherein the transparent electrode layer is applied to the whole top surface of the remaining upper semiconductor layer after the mesa etching, and selectively formed as a thick film by corresponding to the upper electrode formed on the upper semiconductor layer. The light-emitting diode chip manufactured by the method of the present invention is selectively made thick for an area where the upper electrode is formed and made relatively thin as a transparent electrode for the remaining area, thereby effectively improving light transmittance without increasing a driving voltage. |
