| 摘要 |
A method for processing a substrate includes a step of providing the substrate including a photoresist/bottom anti-reflection coating (PR/BARC) layer, a hard mask layer, a stop layer, a carbon layer, and a stack including a plurality of layers. The method includes the following steps of: defining a hole pattern including a plurality of holes in the PR/BARC layer using photolithography; transferring the hole pattern into the carbon layer to be stopped on the stop layer; filling the holes in the hole pattern with oxide to create oxide pillars; using a planarization technique to remove the hard mask layer, a remaining portion of the PR/BARC layer and the stop layer; stripping the carbon layer to expose the oxide pillars; filling space between the oxide pillars with a hard mask material including metal; planarizing at least part of the hard mask material; and stripping the oxide pillars to expose the hole pattern in the hard mask material. |
