SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A MOSFET (1) includes: a substrate (10); a gate insulating film (20); a gate electrode (30); an interlayer insulating film (40) formed on the gate insulating film (20) to surround the gate electrode (30); a buffer film (51) containing Ti and N and containing no Al; and a source electrode (52) containing Ti, Al, and Si. In the MOSFET (1), a contact hole (80) is formed away from the gate electrode (30) so as to extend through the interlayer insulating film (40) and expose a main surface (10A) of the substrate (10). The buffer film (51) is formed in contact with a side wall surface (80A) of the contact hole (80). The source electrode (52) is formed on and in contact with the buffer film (51) and the main surface (10A) of the substrate (10) exposed by forming the contact hole (80).