发明名称 SELF-ALIGNED INTERCONNECT WITH PROTECTION LAYER
摘要 An integrated circuit structure comprises: a first Inter-Layer Dielectric (ILD); a gate stack of the first ILD; a second ILD over the first ILD; a contact plug of the second ILD; and a dielectric protection layer, which is disposed on side surfaces facing the contact plug, coming in contact with the contact plug. The contact plug and the dielectric protection layer are in the second ILD. A dielectric capping layer comes in contact with the contact plug over the contact plug.
申请公布号 KR20150143263(A) 申请公布日期 2015.12.23
申请号 KR20140183271 申请日期 2014.12.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 YEN YU CHAN;FU CHING FENG;LEE CHIA YING
分类号 H01L29/78 主分类号 H01L29/78
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