| 摘要 |
According to the present invention, from a first diffraction chart and a second diffraction chart, an average diffraction intensity ratio (y = (h1, k1, l1)/(h2, k2, l2)) is derived for the rotation angle (φ), and on the basis of this average diffraction intensity ratio, the surface temperature during deposition is calculated. Then, on the basis of the calculated surface temperature of a polycrystalline silicon rod and data relating to the supplied current and the applied voltage during deposition of the polycrystalline silicon rod, the supplied current and the applied voltage are controlled during production of a new polycrystalline silicon rod, controlling the surface temperature during the deposition process. By using this temperature control method, the difference ΔT (= Tc-Ts) between the core temperature Tc and the surface temperature Ts of the polycrystalline silicon rod during the deposition process is controlled, making it possible to control the residual stress in the polycrystalline silicon rod. |
