SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

In order to enable more preferable manufacturing of a structure in which a high-concentration impurity region, a medium-concentration impurity region, and a low-concentration impurity region are disposed from a surface side of a substrate, a method for manufacturing a semiconductor device (10) has: a first injection step of injecting a first conductivity-type impurity from a surface (12b) of a semiconductor substrate (12) of a first conductivity type into said semiconductor substrate (12); a step of melting and then solidifying a first semiconductor region (52) from a specific depth (13b) to said surface (12b), said specific depth (13b) being deeper than a peak concentration depth (13a) of the first conductivity-type impurity in a rising region (50) in which the first conductivity-type impurity concentration has risen in said first injection step and shallower than a deep side end (13c) of said rising region (50); a second injection step of injecting the first conductivity-type impurity from said surface (12b) into a region shallower than said specific depth (13b); and a step of melting and then solidifying a region where the first conductivity-type impurity concentration has risen in said second injection step.