| 发明名称 |
MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION |
| 摘要 |
<p>A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.</p> |
| 申请公布号 |
EP2404332(B1) |
申请公布日期 |
2015.12.23 |
| 申请号 |
EP20100711485 |
申请日期 |
2010.03.02 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
LEE, KANGHO;ZHU, XIAOCHUN;LI, XIA;KANG, SEUNG, H. |
| 分类号 |
B82Y40/00;B82Y25/00;G06F17/50;H01F10/32;H01F41/30;H01F41/32;H01L27/22;H01L43/08;H01L43/12 |
主分类号 |
B82Y40/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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