| 摘要 |
<p>A tunable bandpass filter (10) is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V1, V2) inputted to the tunable bandpass filter (10) switches a first arrangement and a second arrangement of one or more tuning portions (15, 17-1, 17-2, 17-3) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (13). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter (10) is produced by the switching. The tuning portions include the GaAs FET switch (15), a first capacitor (17-1) connected at a first signal terminal of the GaAs FET switch and a second capacitor (17-2) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.</p> |
