| 摘要 |
The present invention relates to a film formation apparatus and method. An oxide layer having excellent properties is obtained without using a heating device for heating a substrate, and an excessive pressure increase in a processing container is prevented. The film formation apparatus comprises: a source gas supply unit for supplying a source gas to a substrate; an atmosphere gas supply unit for continuously forming an ozone atmosphere including ozone having a concentration of provoking a chain decomposition reaction in a vacuum container; an energy supply unit for performing oxidation by continuously generating active species of oxygen by chain decomposition; a control unit for outputting a control signal to repeatedly perform a cycle including a process of supplying the source gas, atmosphere gas, and energy; a buffer region supplied with an inert gas; and a partition unit for partitioning the buffer region with respect to the vacuum container when the atmosphere gas is supplied to the vacuum container, and making the buffer region communicate with the vacuum container when the ozone is decomposed. |
