发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a semiconductor device, a manufacturing method for the same, and an electronic device including the semiconductor device. The disclosed semiconductor device may include a first transistor and a second transistor. The first transistor may include a first channel layer and a first ion gel, and the second transistor may include a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, a graphene. The first ion gel and the second ion gel may include ionic liquids different from each other. The first ion gel and the second ion gel may include cation and/or anion different from each other. One among the first transistor and the second transistor may be a p-type and the other may be a n-type. The first transistor and the second transistor may constitute an inverter. |
申请公布号 |
KR20150142901(A) |
申请公布日期 |
2015.12.23 |
申请号 |
KR20140071488 |
申请日期 |
2014.06.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, UN JEONG;SHIM, YOUNG SEON;PARK, YEON SANG;LEE, CHANG WON;HWANG, SUNG WOO |
分类号 |
H01L29/78;H01L21/265;H01L21/31;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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