发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE
摘要 Disclosed is a semiconductor device, a manufacturing method for the same, and an electronic device including the semiconductor device. The disclosed semiconductor device may include a first transistor and a second transistor. The first transistor may include a first channel layer and a first ion gel, and the second transistor may include a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, a graphene. The first ion gel and the second ion gel may include ionic liquids different from each other. The first ion gel and the second ion gel may include cation and/or anion different from each other. One among the first transistor and the second transistor may be a p-type and the other may be a n-type. The first transistor and the second transistor may constitute an inverter.
申请公布号 KR20150142901(A) 申请公布日期 2015.12.23
申请号 KR20140071488 申请日期 2014.06.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, UN JEONG;SHIM, YOUNG SEON;PARK, YEON SANG;LEE, CHANG WON;HWANG, SUNG WOO
分类号 H01L29/78;H01L21/265;H01L21/31;H01L21/336 主分类号 H01L29/78
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