发明名称 PIEZOELECTRIC ELEMENT
摘要 A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO 3 , and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2¸ is within the range of 21.1° ‰¤ 2¸ ‰¤ 23.4° in the X-ray diffraction pattern (2¸/¸), by the intensity of a diffraction peak, where 2¸ is within the range of 30.1° ‰¤ 2¸ ‰¤ 33.3°, of 0.04 or less.
申请公布号 EP2958157(A1) 申请公布日期 2015.12.23
申请号 EP20150171917 申请日期 2015.06.12
申请人 TDK CORPORATION 发明人 OHTA, RYU;SAKUMA, HITOSHI;HIROSE, YUIKO
分类号 H01L41/187;H01L41/09 主分类号 H01L41/187
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