| 摘要 |
<p>A method of making, and the product resulting, an integrated monolithic circuit having complementary transistors in islands formed in an epitaxial layer of opposite conductivity on a one-type substrate. One transistor, usually the NPN, is conventional. The other transistor, PNP, uses a diffused emitter, a base region formed by the island material, and a collector comprising a buried layer formed in the epitaxial layer by outdiffusion from the substrate. To isolate the collector, a second buried layer can be provided forming part of a tub-shaped isolation region surrounding the collector.</p> |
