Semiconductor device having a gate electrode

摘要

A semiconductor device contains a first conductive type semiconductor substrate (12), at least one cathode (20) formed on one surface (12a) of the semiconductor substrate (12), an anode (22) formed on the other surface (12b) of the semiconductor substrate (12), and a gate electrode (24) electrically insulated from the cathode (20), formed on the one surface (12a) of the semiconductor substrate (12) to control current conduction between the cathode (20) and the anode (22). The semiconductor substrate (12) has a thickness (tb) of less than 460 µm.