Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≦x＜7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
申请公布号
WO2015194178(A1)
申请公布日期
2015.12.23
申请号
WO2015JP03044
申请日期
2015.06.17
申请人
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;SHEN, PENG;DUSSARRAT, CHRISTIAN
