Method for manufacturing a microelectronic device equipped with semiconductor areas on an insulator with horizontal Ge concentration gradient

摘要

The method involves forming an oxidation mask on a silicon on insulator support (100), where the mask comprises holes revealing a silicon based semi-conductor zone and comprising inclined flanks. Silicon-germanium based semiconductor zones (130) are formed on the silicon based semi-conductor zone. The semi-conductor zones are thermally oxidized through the mask. The germanium concentration of the silicon-germanium based semiconductor zones ranges between 5 and 40 percentages.