| 摘要 |
A thin-sheet non-planar circuit device such as a FinFET and a method for forming the device are disclosed. In some exemplary embodiments, the device includes a substrate having a top surface and a feature disposed on the substrate, and extending above the top surface. A material layer disposed on the feature. The material layer includes multiple source/drain regions and a channel region disposed between the source/drain regions. A gate stack is disposed on the channel region of the material layer. In some such embodiments, the feature includes multiple side surfaces, and the material layer is disposed on each of the side surface surfaces. In some such embodiments, the feature also includes a top surface and the material layer is further disposed on the top surface. In some embodiments, the top surface of the feature is free of the material layer. |
