发明名称 |
Substrate structure and method of forming the same |
摘要 |
<p>Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.</p> |
申请公布号 |
EP2108713(B1) |
申请公布日期 |
2015.12.23 |
申请号 |
EP20080163834 |
申请日期 |
2008.09.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAIK, CHAN WOOK;KIM, JONG SEOK;KIM, SUN IL;SON, YOUNG MOK |
分类号 |
C23C14/02;C23C14/16;C23C14/58;H01L21/3065 |
主分类号 |
C23C14/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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