发明名称 Substrate structure and method of forming the same
摘要 <p>Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.</p>
申请公布号 EP2108713(B1) 申请公布日期 2015.12.23
申请号 EP20080163834 申请日期 2008.09.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAIK, CHAN WOOK;KIM, JONG SEOK;KIM, SUN IL;SON, YOUNG MOK
分类号 C23C14/02;C23C14/16;C23C14/58;H01L21/3065 主分类号 C23C14/02
代理机构 代理人
主权项
地址