发明名称 Method for fabricating a porous carbon structure using optical interference lithography, and porous carbon structure fabricated by same
摘要 Provided are a method for fabricating a porous carbon structure using optical interference lithography, and a porous carbon structure fabricated by same, wherein the method for fabricating a porous carbon structure using optical light interference lithography includes: forming a photoresist layer on a substrate; irradiating a three-dimensional optical interference pattern onto the photoresist formed using three-dimensional optical interference lithography to form a three-dimensional porous photoresist pattern; coating the formed three-dimensional porous photoresist pattern with an inorganic material; heating the photoresist pattern on which the inorganic material is coated to carbonize the pattern; and removing the coated inorganic material.
申请公布号 US9217935(B2) 申请公布日期 2015.12.22
申请号 US201013575292 申请日期 2010.04.15
申请人 Industry-University Cooperation Foundation Sogang University 发明人 Moon Jun Hyuk;Jin Woo Min;Shin Juhwan
分类号 G03H1/02;G03F7/20;G03F7/40;G03H1/04 主分类号 G03H1/02
代理机构 Brundidge & Stanger, P.C. 代理人 Brundidge & Stanger, P.C.
主权项 1. A method for fabricating a porous carbon structure using optical interference lithography, the method comprising: forming a photoresist layer on a substrate; irradiating a three-dimensional optical interference pattern onto the formed photoresist layer by using three-dimensional optical interference lithography to form a three-dimensional porous photoresist pattern; developing the photoresist layer onto which the three-dimensional optical interference pattern is irradiated; and coating the formed three-dimensional porous photoresist pattern with a thin coating of about 10 nm to about 200 nm of an inorganic material, wherein the coating includes: at least once absorbing moisture onto the surface of the photoresist pattern,exposing the photoresist pattern to vapor containing an inorganic precursor, andperforming a first heating of the photoresist pattern to remove the moisture;performing a second heating of the photoresist pattern coated with the inorganic material at a temperature of more than about 500° C. in an argon atmosphere to carbonize the photoresist pattern; andremoving the coated inorganic material to obtain a porous carbon structure.
地址 Seoul KR