发明名称 Probe resistance measurement method and semiconductor device with pads for probe resistance measurement
摘要 A probe resistance measuring method includes measuring first resistances at three or more nodes by making contact at least a part of a plurality of probes of a probe unit with three or more pads for resistance measurement based on a first correspondence relation. The measured resistances are stored as a first measurement result and contact resistances of the plurality of probes of the probe unit are calculated based on the first measurement result.
申请公布号 US9217770(B2) 申请公布日期 2015.12.22
申请号 US201213600728 申请日期 2012.08.31
申请人 Renesas Electronics Corporation 发明人 Michimata Shigetomi;Yanagisawa Masayuki;Kuroyanagi Kazumasa
分类号 H01L23/48;G01R31/28;G01R27/20;G01R35/00 主分类号 H01L23/48
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A semiconductor device formed on one semiconductor substrate, comprising: a semiconductor circuit formed on the one semiconductor substrate; a first pad, a second pad and a third pad arranged over the semiconductor substrate without overlapping in a horizontal plan view, wherein each of the first pad, the second pad and the third pad electrically isolated from the semiconductor circuit; a first wiring line connected between the first pad and the second pad; and a second wiring line connected between the second pad and the third pad, wherein the first wiring line has a same resistance as the second wiring line.
地址 Kanagawa JP
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