发明名称 |
Probe resistance measurement method and semiconductor device with pads for probe resistance measurement |
摘要 |
A probe resistance measuring method includes measuring first resistances at three or more nodes by making contact at least a part of a plurality of probes of a probe unit with three or more pads for resistance measurement based on a first correspondence relation. The measured resistances are stored as a first measurement result and contact resistances of the plurality of probes of the probe unit are calculated based on the first measurement result. |
申请公布号 |
US9217770(B2) |
申请公布日期 |
2015.12.22 |
申请号 |
US201213600728 |
申请日期 |
2012.08.31 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Michimata Shigetomi;Yanagisawa Masayuki;Kuroyanagi Kazumasa |
分类号 |
H01L23/48;G01R31/28;G01R27/20;G01R35/00 |
主分类号 |
H01L23/48 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A semiconductor device formed on one semiconductor substrate, comprising:
a semiconductor circuit formed on the one semiconductor substrate; a first pad, a second pad and a third pad arranged over the semiconductor substrate without overlapping in a horizontal plan view, wherein each of the first pad, the second pad and the third pad electrically isolated from the semiconductor circuit; a first wiring line connected between the first pad and the second pad; and a second wiring line connected between the second pad and the third pad, wherein the first wiring line has a same resistance as the second wiring line. |
地址 |
Kanagawa JP |