发明名称 Semiconductor device
摘要 As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.
申请公布号 US9219158(B2) 申请公布日期 2015.12.22
申请号 US201514677262 申请日期 2015.04.02
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Miyairi Hidekazu;Osada Takeshi;Akimoto Kengo;Yamazaki Shunpei
分类号 H01L29/00;H01L29/786;H01L29/423;H01L27/12 主分类号 H01L29/00
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A semiconductor device comprising: a transistor comprising: a first gate electrode on an insulating surface;an oxide semiconductor layer over the first gate electrode;a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; anda second gate electrode over the oxide semiconductor layer; and a terminal comprising: a first conductive layer on the insulating surface;a first insulating layer including an opening over the first conductive layer;a second conductive layer electrically connected to the first conductive layer through the opening; anda transparent conductive layer over the second conductive layer, wherein the first gate electrode and the first conductive layer are formed by patterning a first layer, wherein the source electrode, the drain electrode, and the second conductive layer are formed by patterning a second layer, and wherein the second gate electrode and the transparent conductive layer are formed by patterning a third layer.
地址 Atsugi-shi, Kanagawa JP