NOVEL AMINO-SILYL AMINE COMPOUND AND THE MANUFACTURING METHOD OF DIELECTRIC FILM CONTAINING SI-N BOND BY USING ATOMIC LAYER DEPOSITION

摘要

The present invention relates to a novel amino-silyl amine compound, and to a manufacturing method of an insulating film containing Si-N using the same. The amino-silyl amine compound according to the present invention is thermally stable, has strong volatility, is possible to be treated at room temperature, and is liquid form under high temperature and high pressure. In addition, the present invention provides a manufacturing method of an insulating film containing a Si-N bond of high purity at low temperatures and a plasma condition, using an atomic layer deposition (PEALD) method.