Nonvolatile semiconductor memory device and method for manufacturing the same

摘要

On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.

主权项

1. A nonvolatile semiconductor memory device comprising:
a substrate; a stacked body provided on the substrate, the stacked body including a plurality of interlayer insulating films and gate electrodes alternately stacked therein, and the stacked body including a trench; a charge storage film provided on an inner surface of the trench; a tunnel insulating film provided on the charge storage film; and a channel film provided on the tunnel insulating film and made of a silicon crystal, the tunnel insulating film including:
a silicon oxide layer formed on the charge storage film side;a silicon oxynitride film formed on the channel film side, the silicon oxynitride film including,a nitrogen-rich layer formed on the channel film side; andan oxygen-rich layer formed on the charge storage film side,the nitrogen-rich layer having a higher nitrogen concentration than the nitrogen concentration of the oxygen-rich layer.