| 发明名称 | Micro-light-emitting diode | ||
| 摘要 | A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer. | ||
| 申请公布号 | US9219197(B1) | 申请公布日期 | 2015.12.22 |
| 申请号 | US201514718106 | 申请日期 | 2015.05.21 |
| 申请人 | MIKRO MESA TECHNOLOGY CO., LTD. | 发明人 | Chen Li-Yi;Chang Pei-Yu;Chan Chih-Hui;Chang Chun-Yi;Lin Shih-Chyn;Lee Hsin-Wei |
| 分类号 | H01L21/00;H01L33/38;H01L33/44 | 主分类号 | H01L21/00 |
| 代理机构 | CKC & Partners Co., Ltd. | 代理人 | CKC & Partners Co., Ltd. |
| 主权项 | 1. A micro-light-emitting diode (micro-LED), comprising: a first type semiconductor layer; a second type semiconductor layer joined with the first type semiconductor layer; a first edge isolation structure joined with the first type semiconductor layer; a first electrode electrically coupled with the first type semiconductor layer, wherein at least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode, and the first edge isolation structure is at least partially located on the part of the first type semiconductor layer; and a second electrode electrically coupled with the second type semiconductor layer, wherein at least one of the first electrode and the second electrode is at least partially transparent. | ||
| 地址 | Apia WS | ||