Antimony and germanium complexes useful for CVD/ALD of metal thin films

摘要

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

主权项

1. A method of depositing germanium on a substrate, comprising contacting the substrate under vapor deposition conditions with vapor of a germanium amidinate precursor.