Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elements

摘要

A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.

主权项

1. A method for forming a metal electrode, comprising:
forming a semiconductor layer on a substrate; forming a bonding metal layer on the semiconductor layer; forming a reflective meta layer on the bonding metal layer; and forming the metal electrode by inverting the bonding metal layer and the reflective metal layer through a heat treatment process, wherein the bonding metal layer comprises one selected from the group consisting of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca, Sr, Ba and alloys including at least one of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca, Sr, Ba, and wherein the reflective metal layer comprises one selected from the group consisting of Al, Rh, Ru, Ag and alloys including at least one of Al, Rh, Ru and Ag.