Methods of forming semiconductor devices having recesses

摘要

Fin-FET (fin field-effect transistor) devices and methods of fabrication are disclosed. The fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair of shallow trench isolation (STI) structures as a mask to define a recess in a portion of a substrate between the pair of STI structures, and recessing the pair of STI structures so that the resulting dual fin structures protrude from an active surface of the substrate. The dual fin structures may be used to form single-gate, double-gate, or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming at least two trenches in a substrate through apertures defined in a mask material overlying the substrate; forming a dielectric material in the at least two trenches; defining another aperture extending through the mask material and having an upper edge defined at least in part by trenches of the at least two trenches to expose a region of the substrate, the region disposed between two of the at least two trenches; and forming a recess in the region of the substrate.