GaN epitaxial growth method

摘要

By using a nano-scale patterning process, a dislocation defect density of a GaN epitaxy layer can be further reduced. This is because the nano-scale epitaxy structure dimension is advantageous to the reduction of the strain energy accumulated by mismatched lattices, thereby decreasing the possibility of generating defects. It is verified that the nano-scale patterning process can effectively decrease the dislocation defect density of the GaN epitaxial layer on a sapphire substrate. Considering uniformity and reproducibility on the application of the large-size wafer, the invention has utilized the soft mask NIL patterning technology to successfully implement the uniform deposition and position control of the InAs quantum dot on a GaAs substrate. This further utilizes the NIL technology in conjunction with dry-etching to perform the nano-scale patterning on a heterogeneous substrate, such as Si, sapphire or the like.

主权项

1. A gallium nitride epitaxial growth method, comprising the steps of:
(1) providing a semiconductor laminated layer or a heterogeneous substrate; (2) forming a platform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nano-imprint; (3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and (4) forming a heterogeneous epitaxy region on the semiconductor laminated layer or the heterogeneous substrate; wherein the step (3) of forming the nano-pillar or the nano-hole comprises: (i) using the flexible nano-imprint with a predetermined period on the semiconductor laminated layer or the heterogeneous substrate; (ii) performing a dry-etching process once on the semiconductor laminated layer or the heterogeneous substrate to transfer print a nano-pattern; and (iii) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.