发明名称 Focused ion beam system, sample processing method using the same, and sample processing program using focused ion beam
摘要 A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.
申请公布号 US9218939(B2) 申请公布日期 2015.12.22
申请号 US201414221548 申请日期 2014.03.21
申请人 HITACHI HIGH-TECH SCIENCE CORPORATION 发明人 Asahata Tatsuya;Torikawa Shota
分类号 H01J37/00;H01J37/305;H01J37/30 主分类号 H01J37/00
代理机构 Adams & Wilks 代理人 Adams & Wilks
主权项 1. A focused ion beam system comprising: a focused ion beam irradiation mechanism configured to irradiate a sample, on which a protective film is formed, with a focused ion beam from above the sample; a processing control unit configured to perform a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially form observation surfaces parallel to an irradiation direction of the focused ion beam so as to process the thin piece portion to a target thickness; and an observation surface image generation unit configured to generate an observation surface image of at least one of the observation surfaces, wherein the processing control unit is configured to terminate the removal process when a height of the protective film becomes a predetermined threshold value in the observation surface image.
地址 JP