发明名称 Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof
摘要 An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.
申请公布号 US9218901(B2) 申请公布日期 2015.12.22
申请号 US201113373808 申请日期 2011.12.01
申请人 Board of Regents, University of Houston 发明人 Ignatiev Alex;Wu Naijuan;Young-Fisher Kristina;Ebrahim Rabi
分类号 H01L21/02;H01L21/00;H01C7/00;G11C13/00;H01L45/00 主分类号 H01L21/02
代理机构 Thompson & Knight LLP 代理人 Sickler Jennifer S.;Thompson & Knight LLP
主权项 1. A two terminal multi-layer thin film resistance switching device comprising: a first electrode; a second electrode; first and second active switching layers between the first and second electrodes; and a buffer layer between the first and second active switching layers.
地址 Houston TX US