Methods for forming layers on semiconductor substrates

摘要

Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.

主权项

1. A method of forming a layer on a substrate, comprising:
providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust; providing a plasma from the plasma port to the substrate in a second direction that is different from the first direction to form a layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.